TiAlN/Ta multilayer film with the total thickness of 2 mu m was deposited onto silicon (1 0 0) wafer by ion beam assisted deposition using Ti0.5Al0.5 and Ta as the target materials. Observation of the cross-sectional microstructure and XRD pattern showed that the Ta sub-layer restrained the growth of TiAlN crystal, and decreased the grain size. Nanohardness (H) of the TiAlN/Ta multilayer film was 29% higher and the elastic modulus (E) was 47% higher than that of the TiAlN monolayer film. The critical fracture load (L-c) of 72 mN for the TiAlN/Ta multi layer film was achieved, much higher than that of the monolayer TiAlN film (30 mN), indicated a significant increase of bonding strength. Results of DSC analysis indicated that the TiAlN/Ta multilayer film had the exothermic peak at around 935 degrees C, 75 degrees C above that for the TiAlN monolayer film. Existence of the Ta sub-layers behaved as the barrier layers to prevent oxygen from diffusing into inner layers, resulted in the improvement of thermal stability. (C) 2014 Elsevier B.V. All rights reserved.