Si-rich a-Si1-xCx thin films by d.c. magnetron co-sputtering of silicon and silicon carbide: Structural and optical properties

Ouadfel MA; Keffous A; Brighet A; Gabouze N; Hadjersi T; Cheriet A; Kechouane M; Boukezzata A; Boukennous Y; Belkacem Y; Menari H

Applied Surface Science, Vol.265, 94-100, 2013

DOI10.1016/j.apsusc.2012.10.129 Export Citation

Si-rich a-Si1-xCx thin films by d.c. magnetron co-sputtering of silicon and silicon carbide: Structural and optical properties

Ouadfel MA, Keffous A, Brighet A, Gabouze N, Hadjersi T, Cheriet A, Kechouane M, Boukezzata A, Boukennous Y, Belkacem Y, Menari H

Si-rich hydrogenated amorphous silicon carbide (a-Si1-xCx: H) thin films with different carbon fractions were elaborated by a d. c. magnetron sputtering system. Their structural and optical properties were investigated by UV-visible spectrophotometry, infrared spectroscopy (FTIR), secondary ion mass spectroscopy (SIMS), Raman spectroscopy and photoluminescence (PL). The results show that the increase in the carbon fraction induces an increase in the optical gap (E-g) up to a maximum value of 2.53 eV, corresponding to a carbon fraction (x) of 0.25, and then E-g decreases to 1.76 eV corresponding to a carbon fraction x = 0.33. (C) 2012 Elsevier B. V. All rights reserved.

Keywords:Silicon carbide;Amorphous films;Raman;SIMS