Novel transparent conductive ZnS-SiO2/Ag/ZnS-SiO2 multilayer films were prepared on K9 glass substrates by magnetron sputtering at room temperature. The structure of ZnS-SiO2/Ag/ZnS-SiO2 multilayer films were theoretically designed and the optimal thickness of each layer was determined (45 nm/11 nm/45 nm). To obtain better optical and electrical properties, the ZnS-SiO2/Ag/ZnS-SiO2 samples were annealed at various temperatures. The optical, electrical, and structural characteristics of the ZnS-SiO2/Ag/ZnS-SiO2 multilayer films were then investigated. The results show that when the annealing temperature was 200 degrees C, the sample exhibited a low sheet resistance of 9.7 Omega/sq and a high optical transmittance of 88.4%. For the sample annealed at 200 degrees C, the average transmittance in the visible range (380-780 nm) was calculated and determined as 84.1%. The effects of humidity and temperature on the samples were assessed by an accelerated aging test. The results demonstrate the high damp heat stability of ZnS-SiO2/Ag/ZnS-SiO2 multilayer films. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.