AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3-Ag2S layers at 400 degrees C in N-2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, E-g, of 1.86 eV and an electrical conductivity value of 1.2x10(-3) (Omega cm)(-1). (C) 2012 Elsevier B. V. All rights reserved.