The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp(3)-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. (C) 2012 Elsevier B.V. All rights reserved.