Efficient and stable photocatalysts for water oxidation are highly sought after in the field of photoelectrochemical (PEC) water splitting. Herein, a new type of tantalum and aluminum co-doped iron oxide (Ta/Al-Fe2O3) material was fabricated by a simple drop coating method. XPS analysis suggests that Ta and Al were successfully co-doped into Fe2O3 and Ta can greatly influence the chemical environment of Al and O on the surface of catalyst. The resultant optimum (0.25%)Ta/(10%)Al-Fe2O3 film presented excellent enhanced PEC activity and photostability. A 15 times higher photocurrent density as well as two times higher incident-photon-to-current efficiency (IPCE, 430 nm) can be clearly observed relative to (10%)Al-Fe2O3 at 0.35 V vs. Ag/AgCl. The dramatic enhanced PEC and IPCE performance are attributed to mixed effects induced by tantalum doping, such as positive shift of flat band potential (ca. 50 mV), a reduction in anodic overpotential for water oxidation and greatly reduced charge transfer resistance, which eventually facilitate more efficient separation and easier transfer of photogenerated electron-hole pairs. The highly improved visible light activity and film stability indicate that tantalum and aluminum co-doped iron oxide will be a promising semiconductor for water oxidation. (C) 2013 Elsevier B.V. All rights reserved.