High-quality single-crystalline ternary (Sb1-xBix)(2)Se-3 nanowires (NWs) (x = 0-0.88) are synthesized by chemical vapor deposition. Nanowires with x from 0 to 0.75 are indexed as an orthorhombic structure. With increasing Bi incorporation ratio, (Sb1-xBix)(2)Se-3 NWs exhibit remarkable photoresponsivities, which originate from growing surface Se vacancies and augmented oxygen chemisorptions. Notably, spectra responsivity and external quantum efficiency of an (Sb0.44Bi0.56)(2)Se-3 NW photodetector reach as high as approximate to 8261.4 A/W and approximate to 1.6 x 10(6) %, respectively. Those excellent performances unambiguously demonstrate that Sb-Bi-Se NWs are promising for the utilizations of high-sensitivity and high-speed photodetectors and photoelectronic switches.