Dipping 방법을 이용한 공액 고분자박막 트랜지스터의 전기적 특성 향상

김혜수; 나진영; 박영돈; Hye Su Kim; Jin Yeong Na; Yeong Don Park

Polymer(Korea), Vol.38, No.2, 188-192, March, 2014

Export Citation

Dipping 방법을 이용한 공액 고분자박막 트랜지스터의 전기적 특성 향상

Electrical Characteristics Enhancement of Conjugated Polymer Thin Film Transistor by Using Dipping Method

김혜수, 나진영, 박영돈^†

인천대학교 에너지화학공학과

Hye Su Kim, Jin Yeong Na, and Yeong Don Park^†

Department of Energy and Chemical Engineering, Incheon National University, Incheon 406-772, Korea

E-mail:

초록

본 연구에서는 용해도가 낮은 용매에 dipping하는 방법을 이용하여 고분자 반도체 박막의 분자규칙도를 쉽게 향상시켰다. Poly(3-hexylthiophene)(P3HT)의 구조적, 광학적, 전기적 특성은 dipping 용매의 용해도와 dipping 시간에 따라 크게 영향을 받았다. 특히 methylene chloride 용매에 P3HT 박막을 dipping한 뒤 dipping 시간을 조절하여 고분자 박막의 분자규칙도를 효과적으로 증가시켰다. 분자규칙도와 전기적 특성의 관계를 고려하여 적절한 용매선택과 dipping 시간을 최적화할 수 있었다.

In this work, it is possible to simply improve the molecular ordering of a conjugated polymer thin film by dipping into poor solvent. The structural order, optical, and electrical properties of poly(3-hexylthiophene) (P3HT) films were profoundly influenced by dipping time and solubility of solvent. Especially the dipping time in methylene chloride was controlled to efficiently improve the molecular ordering of the P3HT. The correlation between the structural order and the electrical properties was used to optimize the dipping time in the appropriate solvent.

Keywords:organic thin film transistor (OTFT);poly(3-hexylthiophene) (P3HT);dipping;solubility;molecular ordering.

[References]

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Lee WH, Kim DH, Cho JH, Jang Y, Lim JA, Kwak D, Cho K, Appl. Phys. Lett., 91, 092105 (2007)
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Berson S, De Bettignies R, Bailly S, Guillerez S, Adv. Funct. Mater., 17(8), 1377 (2007)
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[1] Tsao HN, Mullen K, Chem. Soc. Rev., 39, 2372 (2010)

[2] Park YD, Lim JA, Lee HS, Cho K, Mater. Today, 10, 46 (2007)

[3] Sirringhaus H, Brown PJ, Friend RH, Nielsen MM, Bechgaard K, Langeveld-Voss BMW, Spiering AJH, Janssen RAJ, Meijer EW, Herwig P, de Leeuw DM, Nature, 401, 685 (1999)

[4] He ZR, Xiao K, Durant W, Hensley DK, Anthony JE, Hong KL, Kilbey SM, Chen JH, Li DW, Adv. Funct. Mater., 21(19), 3617 (2011)

[5] Yang HC, Shin TJ, Yang L, Cho K, Ryu CY, Bao ZN, Adv. Funct. Mater., 15(4), 671 (2005)

[6] Park YD, Kim DH, Jang Y, Cho JH, Hwang M, Lee HS, Lim JA, Cho K, Org. Electron., 7, 514 (2006)

[7] Dickey KC, Anthony JE, Loo YL, Adv. Mater., 18(13), 1721 (2006)

[8] Lee WH, Kim DH, Cho JH, Jang Y, Lim JA, Kwak D, Cho K, Appl. Phys. Lett., 91, 092105 (2007)

[9] Yamamoto T, Komarudin D, Arai M, Lee BL, Suganuma H, Asakawa N, Inoue Y, Kubota K, Sasaki S, Fukuda T, Matsuda H, J. Am. Chem. Soc., 120(9), 2047 (1998)

[10] Lu HH, Liu CY, Chang CH, Chen SA, Adv. Mater., 19(18), 2574 (2007)

[11] Berson S, De Bettignies R, Bailly S, Guillerez S, Adv. Funct. Mater., 17(8), 1377 (2007)

[12] Gurau MC, Delongchamp DM, Vogel BM, Lin EK, Fischer DA, Sambasivan S, Richter LJ, Langmuir, 23(2), 834 (2007)

[13] Park YD, Cho JH, Kim DH, Jang Y, Lee HS, Ihm K, Kang TH, Cho K, Electrochem. Solid-State Lett., 9, 317 (2006)

[14] McCullough RD, Tristram-Nagle S, WilliamSP, Lowe RD, Jayaraman M, J. Am. Chem. Soc., 115, 4910 (1993)

[15] Liu J, Sheina EE, Kowalewski T, McCullough RD, Angew. Chem., Int. Ed., 41, 329 (2002)

[16] Di CA, Lu K, Zhang L, Liu YQ, Guo YL, Sun XN, Wen YG, Yu G, Zhu DB, Adv. Mater., 22(11), 1273 (2010)

[17] Horowitz G, Adv. Mater., 10(5), 365 (1998)

[18] Park YD, Lee HS, Choi YJ, Kwak D, Cho JH, Lee S, Cho K, Adv. Funct. Mater., 19(8), 1200 (2009)

[19] Tsao HN, Cho D, Andreasen JW, Rouhanipour A, Breiby DW, Pisula W, Mullen K, Adv. Mater., 21(2), 209 (2009)

[20] Chabinyc ML, Toney MF, Kline RJ, McCulloch I, Heeney M, J. Am. Chem. Soc., 129(11), 3226 (2007)