In the course of miniaturization of electronic and microfluidic devices, reliable predictions of the stability of ultrathin films have a strategic role for design purposes. Consequently, efficient computational techniques that allow for a direct comparison with experiment become increasingly important. Here we demonstrate, for the first time, that the full complex spatial and temporal evolution of the rupture of ultrathin films can be modelled in quantitative agreement with experiment. We accomplish this by combining highly controlled experiments on different film-rupture patterns with computer simulations using novel numerical schemes for thin-film equations. For the quantitative comparison of the pattern evolution in both experiment and simulation we introduce a novel pattern analysis method based on Minkowski measures. Our results are fundamental for the development of efficient tools capable of describing essential aspects of thin-film flow in technical systems.