Non-uniform amorphous FexTi1-xO delta, films were fabricated by reactive sputtering. Fe-0, Fe2+, Fe3+, Ti3+, Ti4+ and O2- ions are detected in the form of non-uniform distribution. The films are semiconducting. Below 50 K, the resistivity significantly increases with decreasing temperature, satisfying the variable-range hopping conductance. Magnetoresistance (MR) largely increases with the decrease of temperature below 50 K. At x = 0.52, MR is -8% at 300 K and -32% at 3 K. The large low-temperature MR is related to the antiferromagnetic disordered moments. (C) 2013 Elsevier Ltd. All rights reserved.