Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion

Byung Moon So; Suk Bum Youn; Ik-Tae Im

Journal of Industrial and Engineering Chemistry, Vol.19, No.5, 1747-1751, September, 2013

DOI10.1016/j.jiec.2013.02.017 Export Citation

Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion

Byung Moon So, Suk Bum Youn¹, and Ik-Tae Im^{1, †}

Department of IT Applied System Engineering, College of Engineering, Chonbuk National University, 567 Baekjedaero, Duckjin-gu, Jeonju 561-756, Republic of Korea
¹Department of Mechanical Design Engineering, College of Engineering, Chonbuk National University, 567 Baekjedaero, Duckjin-gu, Jeonju 561-756, Republic of Korea

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Film growth rate and composition variation were numerically analyzed during the selective area growth of InGaN on both GaN triangular stripe and hexagonal pyramid microfacets. To obtain the In composition of the film, concentration of In and Ga atoms due to the surface diffusion was added to the concentration determined from the Laplace equation that governs the gas phase diffusion. When the surface diffusion is considered, the In composition and resulting wavelength increased compared to the results obtained from the vapor phase diffusion model. The In content also increased according to the increasing mask width.

Keywords:Computer simulation;Diffusion;Mass transfer;Metal-organic vapor phase epitaxy;Nitrides;Semiconducting materials

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[1] Yu H, Lee LK, Jung T, Ku PC, Applied Physics Letters., 90, 141906 (2007)

[2] Fang H, Yang ZJ, Yang Y, Dai T, Sang LW, Zhao LB, Yu TJ, Zhang GY, Journal of Applied Physics., 103, 014908 (2008)

[3] Gibbon M, Stagg JP, Cureton CG, Thrush EJ, Jones CJ, Mallard RE, Pritchard RE, Collis N, Chew A, Semiconductor Science and Technology., 8, 998 (1993)

[4] Jones AM, Osowski ML, Lammert RM, Dantzig JA, Coleman JJ, Journal of Electronic Materials., 24, 1631 (1995)

[5] Shioda T, Sugiyama M, Shimogaki Y, Nakano Y, Applied Physics Express., 1, 071102 (2008)

[6] Shioda T, Sugiyama M, Shimogaki Y, Nakano Y, J. Cryst. Growth, 311(10), 2809 (2009)

[7] Shioda T, Tomita Y, Sugiyama M, Shimogaki Y, Nakano Y, IEEE Journal of Selected Topics in Quantum Electronics., 15, 1053 (2009)

[8] Greenspan JE, Zhang X, Puetz N, Emmerstorfer B, J. Vac. Sci. Technol. A, 18(2), 648 (2000)

[9] Ueda M, Hayashi K, Kondou T, Funato M, Kawakami Y, Narukawa Y, Mukai T, Physica Status Solidi (c)., 4, 2826 (2007)

[10] Greenspan JE, Blaauw C, Emmerstorfer B, Glew RW, Shih I, J. Cryst. Growth, 248, 405 (2003)

[11] Shioda T, Sugiyama M, Shimogaki Y, Nakano Y, J. Cryst. Growth, 298, 37 (2007)

[12] Sekiguchi H, Kishino K, Kikuchi A, Applied Physics Letters., 96, 231104 (2010)