Iron selenide thin films have been deposited onto glass substrates by using chemical bath deposition technique. Structural characterization of iron selenide thin films was carried out by means of X-ray diffraction and Fourier transforms infrared spectrum. The morphological characterization of FeSe thin film was carried out using scanning electron microscopy and atomic force microscopy, which revealed porous grain morphology of FeSe with some nano rectangular rods and plates grown on it. The as-deposited thin films exhibited optical band gap energy 2.60 eV. The as deposited FeSe thin films are semiconducting in nature with p-type electrical conductivity. The room temperature electrical resistivity is of the order of 1.1 x 10(5) Omega-cm with activation energy 0.26 and 0.95 eV, respectively, in low and high temperature region. (C) 2012 Elsevier Ltd. All rights reserved.