Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

Sung Won Lee; Minkwan Shin; Jaeyoon Park; Unyong Jeong

Macromolecular Research, Vol.21, No.3, 311-314, March, 2013

DOI10.1007/s13233-013-1119-1 Export Citation

Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

Sung Won Lee, Minkwan Shin, Jaeyoon Park, and Unyong Jeong^†

Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Korea

E-mail:

We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm2/Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.

Keywords:stretchable device;poly(3-hexylthiophene);polymer semiconductor;stretchable active layer

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[Referenced By]

[1] Lin P, Yan F, Adv. Mater., 24(1), 34 (2012)

[2] Wen YG, Liu YQ, Adv. Mater., 22(12), 1331 (2010)

[3] Gelinck G, Heremans P, Nomoto K, Anthopoulos TD, Adv. Mater., 22(34), 3778 (2010)

[4] Facchetti A, Yoon MH, Marks TJ, Adv. Mater., 17(14), 1705 (2005)

[5] Horowitz G, J. Mater. Res., 19, 1946 (2004)

[6] Yan H, Chen Z, Zheng Y, Newman C, Quinn JR, Dotz F, Kastler M, Faccjetti A, Nature, 457, 679 (2009)

[7] Wang CH, Hsieh CY, Hwang JC, Adv. Mater., 23(14), 1630 (2011)

[8] Levesque PL, Sabri SS, Aguirre CM, Guillemette J, Siaj M, Desjardins P, Szkopek T, Martel R, Nano Lett., 11, 132 (2011)

[9] Hwang DK, Fuentes-Hernandez C, Kim JB, Potscavage WJ, Kippelen B, Org. Electron., 12, 1108 (2011)

[10] Yang C, Lin W, Li ZY, Zhang RW, Wen HR, Gao B, Chen GH, Gao P, Yuen MMF, Wong CP, Adv. Funct. Mater., 21(23), 4582 (2011)

[11] Sekitani T, Noguchi Y, Hata K, Fukushima T, Aida T, Someya T, Science, 321, 1468 (2008)

[12] Kim DH, Lu NS, Ma R, Kim YS, Kim RH, Wang SD, Wu J, Won SM, Tao H, Islam A, Yu KJ, Kim TI, Chowdhury R, Ying M, Xu LZ, Li M, Chung HJ, Keum H, McCormick M, Liu P, Zhang YW, Omenetto FG, Huang YG, Coleman T, Rogers JA, Science, 333(6044), 838 (2011)

[13] Kim DH, Ahn JH, Choi WM, Kim HS, Kim TH, Song J, Huang YY, Liu Z, Lu C, Rogers JA, Science, 320, 507 (2008)

[14] Lee SW, Lee HJ, Hyuk CJ, Ko WG, Myoung JM, Hur JH, Park JJ, Cho JH, Jeong U, Nano Lett., 10, 347 (2010)

[15] Lee SW, Kim BS, Park JJ, Hur JH, Kim JM, Sekitani T, Someya T, Jeong U, J. Mater. Chem., 21, 18804 (2011)

[16] Sirringhaus H, Brown PJ, Friend RH, Nielsen MM, Bechgaard K, Langeveld-Voss BMW, Spiering AJH, Janssen RAJ, Meijer EW, Herwig P, de Leeuw M, Nature, 401, 685 (1999)