Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magnetoresistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm(-1), which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film. (C) 2012 Elsevier Ltd. All rights reserved.