Cu(In,Ga)Se-2 (CIGS) solar cells without buffer layers have been demonstrated. Currently, CdS, Zn(O,S,OH), ZnS, or InS buffer layers are used in high efficiency CIGS solar cells to suppress interface recombination. One of the important parameters to reduce the recombination is the conduction band offset (CBO) between the buffer and CIGS layers. In this study, we have proposed the use of a novel transparent conductive oxide (TCO) which can control the CBO to reduce interface recombination and eliminate the buffer layers. The device simulation was used to verify the effect of CBO control theoretically. Then, the novel TCO material of ZnO1-xSx:Al prepared by co-sputtering of ZnO:Al2O3 and ZnS targets was fabricated to verify the CBO effect experimentally. The efficiency of a CIGS solar cell with a ZnO: Al/CIGS/Mo/soda-lime glass structure, i.e. buffer-less structure using a conventional TCO, was significantly low because of severe shunting. In contrast, the use of ZnO1-xSx:Al instead of ZnO: Al increased the shunt resistance of the CIGS solar cell, resulting in higher open-circuit voltage and efficiency. The result is the first proof of the concept of the buffer-less CIGS solar cells. (C) 2012 Elsevier B.V. All rights reserved.