We report the creation of 50 nm thick epitaxial Cu lines with line widths ranging from 20 nm to 120 nm on Si(100) substrate using a combination of electron beam lithography, oblique angle deposition, and lift-off techniques. The increase of measured resistivity as a function of decreasing line width is dominated by surface scattering that is completely diffuse. The measured resistivity of the 20 nm wide lines is similar to 4 mu Omega-cm. (C) 2012 Elsevier B. V. All rights reserved.