The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a-IGZO interface is only around 4.05x10(11) cm(-2). The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 13 V/decade, 1 x 10(5), and 21.8 cm(2)/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications. (C) 2012 Elsevier B.V. All rights reserved.