CuIn(S1 - x,Se-x)(2) (CISSe) films aimed at flexible solar cells were directly prepared on Ti foils from elemental In, Cu, S. and Se particle precursor using microwave irradiation. The formation of the CISSe phase was deduced from X-ray diffraction (XRD) patterns. The (112) peaks of CISSe were well defined and the lattice constants increased in direct proportion to the S/(S + Se) ratio almost satisfying Vegard's law. In particular, CuInSe2 was formed in the desired chalcopyrite lattice as indicated by the presence of (101), (103) and (211) peaks in the XRD pattern. Porous surfaces and formation of by-products were avoided by employing an evaporated In and Cu films instead of In and Cu particles. (C) 2012 Elsevier B.V. All rights reserved.