LaTiOxNy thin films have been deposited by RF sputtering on (001) Nb-doped SrTiO3 and (001) MgO single-crystalline substrates at high temperature (T-S = 800 degrees C) under different nitrogen ratios in the plasma (vol.% N-2 = 0, 25, 71). The band gaps ranged from E-g = 3.30 eV for the epitaxial transparent film containing no nitrogen to E-g = 2.65 eV for the textured coloured film containing a moderate amount of nitrogen. Dielectric characterization in the frequency range [100 Hz-1 MHz], using a metal-insulator-metal structure, has shown a stable permittivity and loss tangent of the epitaxial low-nitrided LaTiOxNy film with values of epsilon' = 135 and tan delta = 1.210(-2) at 100 kHz (RT). (C) 2011 Elsevier B.V. All rights reserved.