Extremely high deposition rates of approximate to 7200 nm s(-1) for N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPD) and of approximate to 1700 nm s(-1) for tris(8-hydroxyquinoline)aluminum (Alq(3)) are found to be possible by controlling source-substrate distances and crucible temperatures. Shapes of ultraviolet-visible absorption spectra and photoluminescence (PL) spectra, atomic force microscope images, X-ray diffraction patterns. PL quantum yields. PL lifetimes, and PL radiative decay rates of the films remain independent of the deposition rates ranging from 0.01 to 1000 nm s(-1). On the other hand, hole currents of hole-only alpha-NPD devices increase approximate to 3 times while electron currents of electron-only A1q(3) devices decrease by approximate to 1/60 as the deposition rates are increased from 0.01 to 10 nm s(-1). The increase in hole current is confirmed to arise from an increase in hole mobility of alpha-NPD measured using a time-of-flight technique. The increase in hole mobility is probably due to a parallel orientation of an electronic transition moment of alpha-NPD at the higher deposition rates. Moreover, the three orders of magnitude increase in deposition rate from 0.01 to 10 nm s(-1) of alpha-NPD and Alq(3) results in a relatively small increase in voltage of approximate to 15% and a decrease in external quantum efficiency of approximate to 30% in organic light-emitting diodes (OLEDs). The reduction of the OLED performance is attributable to the marked decrease in electron current relative to the slight increase in hole current, indicating a decrease in charge balance factor at the higher deposition rates. (C) 2011 Elsevier B.V. All rights reserved.