We have studied the influence of growth temperature (T-G) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se-2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T-G up to 350 degrees C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T-G. For a T-G <= 200 degrees C, a reduction in the series resistance enhanced the solar cell performance, while the p-n interface of the device was found to become deteriorated severely at T-G>200 degrees C. CIGS solar cells with ITO deposited at T-G=200 degrees C showed the best performance in terms of efficiency. (C) 2011 Elsevier B.V. All rights reserved.