Ce1-xFexO2-delta solid solution films were prepared on amorphous silica substrates by laser chemical vapor deposition using metal dipivaloylmethanate precursors and a semiconductor InGaAlAs (808 nm in wavelength) laser. X-ray diffraction revealed the formation of single Ce1-xFexO2-delta phase at x <= 0.15, while CeO2 and Fe2O3 phases were found for higher Fe content. Highly (100)-oriented Ce1-xFexO2-delta (x=0.02) films were obtained at laser power, P-L=50-200 W and deposition temperature, T-dep = 800-1063 K. Lotgering factor (200) was calculated to be above 0.8 for films prepared at P-L=50-150 W. X-ray photoelectron spectroscopy revealed the presence of Fe3+,Ce4+ and Ce3+ on solid solution films. Cross-sectional transmission electron microscope images disclosed a film columnar feather-like structure with a large number of nano-scale inter-spaces. Deposition rates were 2 or 3 orders of magnitude higher than those reported for conventional metal organic chemical vapor deposition of CeO2. (C) 2011 Elsevier B.V. All rights reserved.