Thin Solid Films, Vol.520, No.2, 789-792, 2011
Enhanced tunable dielectric properties of Ba0.5Sr0.5TiO3/Bi1.5Zn1.0Nb1.5O7 multilayer thin films by a sol-gel process
Ba0.5Sr0.5TiO3(BST)/Bi1.5Zn1.0Nb1.5O7(BZN) multilayer thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The structures and morphologies of BST/BZN multilayer thin films were analyzed by X-ray diffraction (XRD) and field-emission scanning electron microscope. The XRD results showed that the perovskite BST and the cubic pyrochlore BZN phases can be observed in the multilayer thin films annealed at 700 degrees C and 750 degrees C. The surface of the multilayer thin films annealed at 750 degrees C was smooth and crack-free. The BST/BZN multilayer thin films annealed at 750 degrees C exhibited a medium dielectric constant of around 147, a low loss tangent of 0.0034, and a relative tunability of 12% measured with dc bias field of 580 kV/cm at 10 kHz. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:Dielectric materials;Multilayer thin films;Rapid thermal annealing;Sol-gel process;Tunable dielectric properties