Thin Solid Films, Vol.519, No.21, 7369-7373, 2011
Interdiffusion at the BaCuSeF/ZnTe interface
BaCuSeF/ZnTe is a model system to investigate physical and chemical properties of the interfaces of non-oxide wide-bandgap p-type semiconductors with materials used in chalcogenide solar cells. The BaCuSeF/ZnTe interface was studied using electron microscopy and photoelectron spectroscopy. Both techniques indicate that Se and Cu from BaCuSeF diffuse into ZnTe creating an interdiffused layer between these two materials. The interdiffusion may be attributed to the differences in materials formation enthalpies and to Fermi level pinning in BaCuSeF. (C) 2010 Elsevier B.V. All rights reserved.
Keywords:BaCuChF;p-Type transparent conductor;Wide-band gap semiconductor;Thin film chalcogenide solar cells;Scanning transmission electron microscopy;Energy dispersive x-ray analysis;Copper vacancy;Fermi level pinning