CuInS2, CuIn3S5, CuIn5S8 and CuIn7S11 compounds were synthesized by the horizontal Bridgman method using high-purity copper, indium and sulphur elements. Crushed powders of these ingots were used as raw materials for the vacuum thermal evaporation. So, CuIn2n (+) S-1(3n) (+ 2) (n = 0, 1,2, and 3) thin films were deposited by single source vacuum thermal evaporation onto glass substrates heated at 150 degrees C. The structural, compositional, morphological, electrical and optical properties of the deposited films were studied using X-ray diffraction (XRD), energy dispersive X-ray, atomic force microscopy and optical measurement techniques. XRD results revealed that all the films are polycrystalline. However. CuInS2 and CuIn3S5 films had a chalcopyrite structure with preferred orientation along 112 while CuIn5S8 and CuIn7S11 films exhibit a spinel structure with preferred orientation along 311. The absorption coefficients of the all CuIn2n + S-1(3n +) (2) films are in the range of 10(-4) and 10(-5) cm(-1). The direct optical band gaps of CuIn2n + 1S3n + 2 layers are found to be 1.56, 1.78, 1.75 and 1.30 eV torn = 0, 1, 2, and 3, respectively. CuIn3S5 and CuIn5S8 films are p type with electrical resistivities of 4 and 12 Omega cm whereas CuInS2 and CuIn7S11 are highly compensated with resistivities of 1470 and 11760 cm, respectively. (C) 2011 Elsevier B.V. All rights reserved.