Thin Solid Films, Vol.519, No.19, 6319-6322, 2011
Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation
Broad photoluminescence (PL) band at 2.97 eV excited in the band near 6.0 eV in amorphous chemical vapor deposition films is related to the neutral oxygen vacancy by analogy with crystalline Al2O3. The identification of this PL band was supported by the results of first-principle quantum chemical simulation, which showed 6.3 and 6.4 eV bands in the extinction spectra for alpha- and gamma-Al2O3, respectively. Other PL bands are attributed to ionized single vacancies (F+-centers), divacancies (F-2) and, probably, interstitial Al. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:Alumina;Thin films;Density functional theory;Simulation;Photoluminescence;Chemical vapor deposition