We report here, the first observation of silicon nanowire growth via the VLS route at 400 degrees C using the HWCVD technique with gold (Au) as catalyst. The supersaturation of the alloy droplet, due to a large flux of atomic silicon generated due to efficient dissociation of the silane over the hot wire, leads to the precipitation of Si nanowires. The hot wire process plays a dual role in the entire nanowire growth. Firstly, the atomic hydrogen generated from the hot wire leads to the formation of the metal nanoclusters. Secondly, it offers a continuous supply of silicon atoms enabling efficient diffusion of Si into the Si-Au eutectic alloy leading to the growth of dense silicon nanowires as observed in the SEM. The Raman and TEM data show that the Si nanowires are amorphous in nature. Precise tuning of the hot wire CVD process parameters gives rise to a high density of silicon nanowires having diameters as small as 50 nm and lengths of about a few microns. (C) 2011 Elsevier B.V. All rights reserved.