Antimony telluride (Sb2Te3) is a chalcogenide material used in thermoelectric applications. The deposition of thin films of Sb2Te3 requires a precisely controlled process to achieve a desirable high thermoelectric figure-of-merit. The optimization of the thermal co-evaporation process for p-type Sb2Te3 thin-film onto plastic substrates (Kapton (c) polyimide) for thermoelectric applications is reported. The influence of deposition parameters and composition on thermoelectric properties was studied, seeking optimal thermoelectric performance. Energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy all confirmed the formation of Sb2Te3 thin films. Seebeck coefficient (up to 190 mu VK-1), in-plane electrical resistivity (8-15 mu Omega m), carrier concentration (1 x 10(19)-7 x 10(19) cm(-3)) and Hall mobility (120-180 cm(2)V(-1)s(-1)) were measured at room temperature for the best Sb2Te3 thin-films. (C) 2011 Elsevier B.V. All rights reserved.