Nickel films of 170 nm thick were grown on sapphire substrates of the A, R and C orientations. Their electric characteristics and surface morphology were studied. Peculiarities of the film growth and optimum growth conditions for films of high electron mobility were determined. Nickel films grown on the sapphire A-plane with a high residual electron mean free path were found suitable for the fabrication of ballistic planar ferromagnetic nanostructures. Ballistic electron transport was observed in cross-type epitaxial Ni (111) nanostructures. (C) 2010 Elsevier B.V. All rights reserved.