Self-limiting deposition of titanium dioxide thin films was accomplished using pulsed plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD) at low temperatures (T<200 degrees C) using TiCl4 and O-2 TiCl4 is shown to be inert with molecular oxygen at process conditions, making it a suitable precursor for these processes The deposition kinetics were examined as a function of TiCl4 exposure and substrate temperature. The quality of the anatase films produced by the two techniques was nominally identical. The key distinctions are found in precursor utilization and conformality. Pulsed PECVD requires 20 times less TiCl4, While PEALD must be used to uniformly coat complex topographies. (c) 2010 Elsevier B.V. All rights reserved