V-doped K0.5Bi4.5Ti4O15 (K0.5Bi4.5-x/3Ti4-xVxO15, KBTiV-x, x=0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750 degrees C for 3 min in an oxygen atmosphere. Among them, KBTiV-0.03 thin film exhibited the most outstanding electrical properties. The value of remnant polarization (2P(r)) was 75 mu C/cm(2) at an applied electric field of 366 kV/cm. The leakage current density of the thin film capacitor was 5.01 x 10(-8) at 100 kV/cm, which is approximately one order of magnitude lower than that of pure K0.5Bi4.5Ti4O15 thin film capacitor. We found that V doping is an effective method for improving the ferroelectric properties of K0.5Bi4.5Ti4O15 thin film. (C) 2010 Elsevier B.V. All rights reserved.