This paper describes the development of micro-capacitors with electrodes based on electrochemically grown vertical gold nanowire arrays. A high aspect-ratio anodized aluminum oxide template integrated on silicon dioxide/silicon substrates was exploited for fabricating a vertical array of nanowires with a high surface to volume ratio. Bismuth ferric oxide thin films were deposited to create high dielectric material between the electrodes using room temperature electrodeposition. This nanofabrication process may be compatible with a complementary metal-oxide-semiconductor (CMOS) process, therefore, this capacitor can be used for protecting and regulating the surge voltage biased to the CMOS circuits. This capacitor achieved a high density capacitance of 3.1 mu F/m(2) at 1 MHz, which was measured using a parallel plate set-up. (C) 2010 Elsevier B.V. All rights reserved.