We demonstrate distributed Bragg reflector (DBR) enhanced electroluminescence from a silicon nanocrystal-based light emitting device. An a-Si/SiO(2) superlattice containing silicon nanocrystals serves as the intrinsic layer in an n-i-n device that is embedded in a DBR cavity consisting of alternating layers of silicon and silicon dioxide. The entire structure, including DBR, superlattice and contact layers, is deposited by plasma-enhanced chemical vapor deposition. The photoluminescence, electroluminescence (EL) and optical output power are measured and compared to a reference device. The DBR is found to enhance the peak EL intensity by a factor of 25 and the external quantum and power conversion efficiencies by a factor of 2. (C) 2010 Elsevier B.V. All rights reserved.