Non-volatile memory devices based on the charge transfer complex copper-7,7,8,8 tetracyanochinodimethane were fabricated on ridged and flexible substrates with special emphasis on their general functionality and cross talk behaviour in 4x4 passive matrix arrays. Device characteristics have been investigated at elevated temperatures during operation (ranging from room temperature to 120 degrees C) under ambient conditions without encapsulation. To explore the influence of mechanical stress on device performance, the memory cells on flexible polyethylene terephthalate substrates were bended during operation, up to a convex and concave radius of 4 mm. The detected shift of the switching voltages and the decrease of reliability can be attributed to stress induced cracks in the active layer. (C) 2009 Elsevier B.V. All rights reserved.