We present in this paper the experimental results concerning the deposition of tin oxide SnO(2) on silicon substrate by the technique of Atmospheric Pressure Chemical Vapour Deposition (APCVD). The obtained Si-SnO(2) heterostructure is used for photovoltaic application. The properties of tin oxide thin films deposited by APCVD technique depends on three parameters which are the deposition temperature, the deposition time and the oxygen pressure. We have obtained the optimal value of each parameter by the measurement of the open-circuit voltage of the obtained Si-SnO(2) heterostructure. So, at the temperature of 490 degrees C during 12 min of deposition time under oxygen pressure of I bar we have obtained tin oxide thin layers exhibiting the best optoelectronic and morphology characteristics. These thin films are polycrystalline and present a resistivity of 1.3 . 10(-3) Omega cm and a refractive index of 1.72. The Si-SnO(2) heterojunction solar cell that has an area of 2 x 1.5 cm(2) is characterised by the current-voltage I(V) measurement. It gives an open circuit voltage of 0.45 V and a short circuit current of 74 mA (C) 2009 Elsevier B.V. All rights reserved.