The improved structural and electrical properties of tin-oxide films produced by using ultralow-pressure sputtering (ULPS) method are reported. The Hall mobility of the film (similar to 13 cm(2)/V s) deposited using ULPS was about 1.5 times higher than that of the film (similar to 8 cm(2)/V s) sputtered using a pressure of 4.0 x 10(-1) Pa. As the sputtering pressure was decreased, the film was transformed from an amorphous structure to a nanocrystalline one and gained a stoichiometric SnO(2) composition. These changes in the film structure sufficiently decreased the carrier concentration to facilitate application to thin film transistors. (C) 2009 Elsevier B.V. All rights reserved.