This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (p) and the activation energy (E(a)) of the electron transport in the conduction band of the ZnO film. The p of 2 x 10(4) 5 x 10(7) Omega-cm corresponds to E(a) of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O(2) ratio of 4:1 are 53 +/- 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (+/- 10 V) with a threshold voltage shift of 4.0 V. (C) 2009 Elsevier B.V. All rights reserved.