Two technological strategies to generate patterned diamond growth have been tested. The diamond microstructures (i.e. linear stripes and 5 pm narrow channels) were grown in the thickness of 450 nm on Si/SiO(2) substrates by a microwave plasma chemical vapor deposition process. Strategy 1, employing a metal mask, resulted in unsatisfying patterned diamond growth due to instability of metal mask. Strategy 2 was based on a direct lithographic patterning of the seeding layer and resulted in a strongly selective, homogenous, and compact growth of diamond on the polymer-coated seeding patterns. This is assigned to the high seeding yield. The diamond micro-structures formed in this way exhibit surface conductivity of 10(-7) (Omega/square)(-1) as assessed by I-V characteristics. The observed results appear promising for the development of directly grown diamond-based transistors. (C) 2009 Elsevier B.V. All rights reserved.