A low-temperature (similar to 350 degrees C) solution-processed CuInSSe photovoltaic cell is reported. The CuInSSe film was solution-deposited via spin-coating from a precursor solution consisting of metal chalcogenides (Cu(2)S and In(2)Se(3)) dissolved in hydrazine (N(2)H(4)). X-ray diffraction data indicated a full conversion from the hydrazine precursor to CuInS(x)Se(2-x) structure at 350 degrees C with an average crystallite size of approximately 45 nm. Bandgap tuning of the CuInS(x)Se(2-x) was achieved by varying the excess amount of sulfur in the precursor solution. Based on the (220) reflection of the XRD pattern, the bandgap of CuInS(x)Se(2-x) ranged from 1.00 to 1.14 eV. Standard testing conditions at 1-sun intensity resulted in a power conversion efficiency of 7.43%. Published by Elsevier B.V.