Thin Solid Films, Vol.517, No.19, 5783-5785, 2009
Metal-mediated crystallization in Si-Ag systems
Ag-Si composite films, 3 mu m thick, were deposited on high resistivity Si (111) substrates by magnetron co-sputtering at room temperature, 400 degrees C, and 550 degrees C. Energy dispersive spectroscopy confirmed the atomic percentage of Ag was 20%-23%. Annealing for 20 h at 400 degrees C and rapid thermal annealing at 700 degrees C for three to five minutes were shown to produce Si crystallites. The resistivity and crystallization in conjunction with nanoparticle sizes were investigated with a four point probe and X-ray diffraction. (C) 2009 Elsevier B.V. All rights reserved.