Development of non-volatile memories based on organic soft materials is one of two main trends in industry for flash-memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast programming switching devices. SiO(2)-Rose Bengal (bis-triethylammonium) hybrid thin films are reported here together with their characterizations. The technology yields well reproducible films with good current-voltage switching characteristics. Owing to their physical and chemical stability the films are suited to standard micro-photolitography technology, rendering their fabrication cost-effective. (C) 2009 Elsevier B.V. All rights reserved.