The thermal radiation which generated from the patterned Ta/Pt/Ta thin heater achieved a high temperature up to 1010 degrees C under applied current of 2.4 A. In order to reduce an electromigration at high current of 2 A a Ta, capping layer was placed on the Pt layer instead of conventional capping layer, such as SiNx and CoWP. Under the thermal radiation at the applied current of 2 A in the Ta/Pt/Ta thin heater, the Ta capping layer enhanced the lifetime of the Pt thin heater up to 5 h. A stamping process for the crystallization of a-Si was performed for 40 samples using the Ta/Pt/Ta thin heater. For all samples, a-Si has been selectively crystallized and Raman peaks were located near 519 cm(-1). These results indicated that the thermal radiation of the Ta/Pt/Ta thin heater was maintained constantly due to the Ta capping. (C) 2009 Elsevier B.V. All rights reserved.