Silicon-on-Insulator (SOI) substrates incorporated with buried MoSi2 were fabricated using room temperature plasma bonding technology and smart cut technology. The molybdenum disilicide phase formation and morphology were studied by means of four-point probe measurements, X-ray diffraction analysis, atomic force microscopy and transmission electron microscopy examination. It is found that the transition of high-resistance phase Mo3Si to low-resistance phase h-MoSi2 occurs at approximately 750 degrees C. The t-MoSi2 phase emerges at approximately 900 degrees C. SOI substrate incorporated with buried silicide layer of complete t-MoSi2 phase can be achieved by 900 degrees C annealing for 20 min. (C) 2008 Elsevier B.V. All rights reserved.