In this study, we discuss the case for integration of epitaxial (Pb,La)(ZrTi)O-3 (PLZT) thin films with silicon for electro-optic device applications. PUT films, approximately 500 nm thick, were grown by on-axis radio frequency magnetron sputtering on CeO2/YSZ-buffered Si(100) substrate with a SrRuO3 electrode layer embedded between CeO2 and PLZT. The structural properties and surface topography of the different oxide layers were examined with X-ray diffraction analysis and atomic force microscopy. The perovskite thin films were predominantly (001)-oriented, with a (002) rocking curve halfwidth of approximately 0.3 degrees and a surface roughness compatible with requirements for application in optical devices. The PLZT cation stoichiometry was assessed from quantitative X-ray photoelectron spectroscopy. These measurements uncovered a substantial depletion of lead in the film surface for layers deposited at substrate temperatures above -600 degrees C, whereas the surface concentration of La, Zr and Ti remained virtually unaffected over a wide range of growth temperatures. (C) 2008 Elsevier B.V. All rights reserved.