In this study, a novel material CaCu3Ti4O12 (CCTO), for resistance random access memory application, was prepared by sol-gel method and annealed at various temperatures. The crystallinity and microstructure of CCTO film, improve as annealing temperature increases. The CCTO films annealed at 800 degrees C and above endure more switching cycles (> 1000) and exhibit a small degradation of the resistance ratio between the high resistance state and the low resistance state than those annealed at 700 degrees C do. The correlation between resistance switching behaviors and film microstructure is discussed. (C) 2008 Elsevier B.V. All rights reserved.