The effect of annealing on the sandwiched Si/C/Si multilayer on a Si(100) Substrate using ion beam sputtering (IBS) system under ultra-high vacuum (UHV) was investigated. Carbon layer thickness was fixed at 100 nm and a-Si ranged from 10 nm to 25 nm. Rapid thermal annealing was performed to investigate the evolution of sp(2)-sp(3) bonding at annealing temperature from room temperature (RT) to 750 degrees C and annealing time from 0.5 to 2 min. Raman spectroscopy was utilized to characterize bonding behavior of Si/C/Si multilayers for the variation of graphite peak (G-peak), peak (D-peak) of carbon film at specific wavenumbers shift. The-higher the integrated intensity ratio (I-D/I-G), the more the sp(2) bonds is. From experimental results, I-D/I-G., ratio increases with annealing temperature from RT to 750 degrees C due to graphitization effect for the increased sp(2) bonds. However, I-D/I-G ratio reduces a little with annealing time from 0.5 to 2 min, It implies that a little increase of sp(3) bonds of carbon, which is primarily from the sp(3) Si-C bonds, can be an index of the formation of SiC. Comparing the effect of both annealing temperature and time oil the evolution of sp(2)-sp(3) bonds, the annealing temperature dominates more on the sp(2)-sp(3) evolution of a-Si/C/a-Si on the Si(I 00) under rapid thermal annealing than the annealing time. Also, AES depth profile was used to examine the interdiffusion and reaction between a-Si and C for SiC formation and had a consistent result with Raman. (C) 2008 Elsevier B.V. All rights reserved.