(1-x)Pb[Yb1/2Nb1/2]O-3-xPbTiO(3) (PYbN-PT,x=0.5) (001)oriented thin films were deposited onto LaNiO3 (LNO)/Si (001) substrates by sol-gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 degrees C and 750 degrees C using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 degrees C/s and high annealing temperature near 750 degrees C produce the greatest degree of(001) orientation, which gives rise to improved dielectric properties. (C) 2008 Elsevier B.V. All rights reserved.