Thin Solid Films, Vol.517, No.1, 459-461, 2008
Chemical and optical profiling of ultra thin high-k dielectrics on silicon
The thickness of HfO(2) and hafnium silicate Hf(x)Si(1-x)O(y) thin films with a range of compositions are investigated using three complementary analytical techniques. We compare results obtained from Medium Energy Ion Scattering spectroscopy, spectroellipsometry and high-resolution Transmission Electron Microscopy. Our results demonstrate that the thickness of the silicate layers decreases with the Hf content. (C) 2008 Published by Elsevier B.V.
Keywords:Insulators;High-k;Silicate;Medium Energy Ion scattering;Spectroellipsometry;Transmission Electron Microscopy