In this work, we studied the effect of deposition temperature on the characteristics of silicon thin films deposited by pulsed DC magnetron sputtering. This pulse consists of a successive fine layers (about 25 to 30 nm) deposition separated by a relaxation time. This last is ensured by the injection of a high quantity of hydrogen without stopping plasma. When we increase the temperature of deposition (from 200 degrees C to 550 degrees C) some characteristics of the material show variations similar to the results met in the literature. We thus obtain a diminution in the optical gap (from 2.00 eV to 1.66 eV) and a reduction in the hydrogen relative concentration (from 30% to 5%). Otherwise, in the range of deposition temperature between 300 degrees C and 400 degrees C, the microstructural parameter "R(2090)", the dark conductivity "sigma(obs)" and its activation energy "Ea" present a particular evolution. In addition, the samples Raman shift spectra shows that the material deposited at 350 degrees C presents, in its structure, a microcrystalline phase in addition to the amorphous one. (C) 2008 Elsevier B.V. All rights reserved.