Thin Solid Films, Vol.517, No.1, 235-238, 2008
Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer
The formation of different types of twins were observed in SiGe/graded buffer/Si(110) heterostructures grown at different substrate temperatures using gas-source molecular beam epitaxy. It was found that the growth twins were dominant when the substrate temperature was lower than 700 degrees C. The growth at higher substrate temperature effectively suppressed the nucleation of growth twins and resulted in the formation of another type of defect, microtwin lamellas, which accompany the strain-relaxation process. (c) 2008 Published by Elsevier B.V.